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2SC3932

Panasonic Semiconductor
Part Number 2SC3932
Manufacturer Panasonic Semiconductor
Description Silicon NPN Transistor
Published Mar 22, 2005
Detailed Description Transistors 2SC3932 Silicon NPN epitaxial planar type For high-frequency amplification/oscillation/mixing 0.3+–00..01 ...
Datasheet PDF File 2SC3932 PDF File

2SC3932
2SC3932

Overview
Transistors 2SC3932 Silicon NPN epitaxial planar type For high-frequency amplification/oscillation/mixing 0.
3+–00.
.
01 Unit: mm 0.
15+–00.
.
0150 (0.
425) ■ Features 3 • High transition frequency fT • S-Mini type package, allowing downsizing of the equipment 1.
25±0.
10 2.
1±0.
1 5˚ and automatic insertion through the tape packing 1 2 0.
2±0.
1 (0.
65) (0.
65) 1.
3±0.
1 / ■ Absolute Maximum Ratings Ta = 25°C 2.
0±0.
2 Parameter Symbol Rating Unit e pe) Collector-base voltage (Emitter open) VCBO 30 V c e.
d ty Collector-emitter voltage (Base open) VCEO 20 V n d stag tinue Emitter-base voltage (Collector open) VEBO 3 0 to 0.
1 0.
9±0.
1 0.
9–+00.
.
12 V a e cle con Collector current IC 50 mA lifecy , dis Collector power dissipation PC 150 mW n u duct typed Junction temperature Tj 150 °C te tin Pro ed Storage temperature Tstg −55 to +150 °C 10˚ Marking Symbol: R 1: Base 2: Emitter 3: Collector JEITA: SC-70 SMini3-G1 Package in n s followlianngefdoudriscontinu ■ Electrical Characteristics Ta = 25°C ± 3°C a o lude e, p Parameter Symbol Conditions Min Typ Max Unit inc typ Collector-base voltage (Emitter open) c tinued ance Emitter-base voltage (Collector open) M is con inten Base-emitter voltage /Dis ma Forward current transfer ratio D ance type, Transition frequency * ten ce Reverse transfer capacitance ain nan (Common base) VCBO VEBO VBE hFE fT Crb IC = 100 µA, IE = 0 30 IE = 10 µA, IC = 0 3 VCB = 10 V, IE = −2 mA VCB = 10 V, IE = −2 mA 25 VCB = 10 V, IE = −15 mA, f = 200 MHz 800 VCE = 6 V, IC = 0, f = 1 MHz V V 720 mV 250  1 600 MHz 0.
8 pF M inte Reverse transfer capacitance ma (Common emitter) Cre VCB = 10 V, IE = −1 mA, f = 10.
7 MHz 1.
0 1.
5 pF ned Power gain GP VCB = 10 V, IE = −1 mA, f = 200 MHz 20 dB (pla Note) 1.
Measuring methods are based on JAPANESE INDUSTRIAL STANDARD JIS C 7030 measuring methods for transistors.
2.
*: Rank classification Rank T S No-rank fT 800 to 1 400 1 000 to 1 600 800 to 1 6...


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