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2SC5480

Part Number	2SC5480
Manufacturer	Inchange Semiconductor
Description	Silicon NPN Power Transistor
Published	Apr 4, 2012
Detailed Description	isc Silicon NPN Power Transistor INCHANGE Semiconductor 2SC5480 DESCRIPTION ·High Breakdown Voltage- : VCBO= 1500V (Mi...
Datasheet	2SC5480 PDF File

Overview

isc Silicon NPN Power Transistor INCHANGE Semiconductor 2SC5480 DESCRIPTION ·High Breakdown Voltage- : VCBO= 1500V (Min) ·High Switching Speed ·Built-in Damper Diode ·100% avalanche tested ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·Designed for horizontal deflection output stage applications.
ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCES Collector-Emitter Voltage 1500 V VEBO Emitter-Base Voltage 5 V IC(peak) Collector Current-Peak 14 A IC(surge) Collector Current-Surge PC Collector Power Dissipation @ TC=25℃ TJ Junction Temperature 28 A 50 W 150 ℃ Tstg Storage Temperature Range -55~150...

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