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2SC3957

Part Number	2SC3957
Manufacturer	Hitachi Semiconductor
Description	Silicon NPN Transistor
Published	Mar 22, 2005
Detailed Description	2SC3957 Silicon NPN Epitaxial, Darlington Application High gain amplifier Outline MPAK-4 2 1 3 1 4 3 1. Collector...
Datasheet	2SC3957 PDF File

Overview

2SC3957 Silicon NPN Epitaxial, Darlington Application High gain amplifier Outline MPAK-4 2 1 3 1 4 3 1.
Collector 2.
Emitter 3.
Base 4.
NC 2 2SC3957 Absolute Maximum Ratings (Ta = 25°C) Item Collector to base voltage Collector to emitter voltage Emitter to base voltage Collector current Collector peak current Collector power dissipation Junction temperature Storage temperature Symbol VCBO VCEO VEBO IC I C (peak) PC Tj Tstg Ratings 40 30 10 300 500 150 150 –55 to +150 Unit V V V mA mA mW °C °C Electrical Characteristics (Ta = 25°C) Item Collector to emitter breakdown voltage Collector cutoff current Emitter cutoff current DC current transfer ratio Symbol V(BR)CEO I CBO I EBO hFE1* 1 Min 30 — — 2000 3000 3000 — — Typ — — — — — — — — Max — 100 100 100000 — — 1.
5 2.
0 Unit V nA nA Test conditions I C = 1 mA, RBE = ∞ VCB = 30 V, IE = 0 VEB = 10 V, IC = 0 I C = 10 mA, VCE = 5 V*2 I C = 100 mA, VCE = 5 V*2 I C = 400 mA, VCE = 5 V*2 I C = 100 mA, IB = 0.
1 mA*2 I C = 100 mA, IB = ...

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