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RJP60D0DPM

Renesas
Part Number RJP60D0DPM
Manufacturer Renesas
Description N-Channel IGBT
Published May 2, 2012
Detailed Description Preliminary Datasheet RJP60D0DPM Silicon N Channel IGBT High Speed Power Switching Features  Short circuit withstand t...
Datasheet PDF File RJP60D0DPM PDF File

RJP60D0DPM
RJP60D0DPM

Overview
Preliminary Datasheet RJP60D0DPM Silicon N Channel IGBT High Speed Power Switching Features  Short circuit withstand time (5 s typ.
)  Low collector to emitter saturation voltage VCE(sat) = 1.
6 V typ.
(IC = 22 A, VGE = 15V, Ta = 25°C)  Gate to emitter voltage rating 30 V  Pb-free lead plating and chip bonding R07DS0088EJ0200 Rev.
2.
00 Nov 16, 2010 Outline RENESAS Package code: PRSS0003ZA-A (Package name: TO-3PFM) C G 1.
Gate 2.
Collector 3.
Emitter E 1 www.
DataSheet.
co.
kr 2 3 Absolute Maximum Ratings (Ta = 25°C) Item Collector to emitter voltage Gate to emitter voltage Collector current Tc = 25°C Tc = 100°C Collector peak current Collector dissipation Junction to case thermal imp...


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