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RJP60D0DPK

Renesas
Part Number RJP60D0DPK
Manufacturer Renesas
Description Silicon N-Channel IGBT
Published Jul 21, 2012
Detailed Description Preliminary Datasheet RJP60D0DPK Silicon N Channel IGBT High Speed Power Switching Features  Short circuit withstand t...
Datasheet PDF File RJP60D0DPK PDF File

RJP60D0DPK
RJP60D0DPK

Overview
Preliminary Datasheet RJP60D0DPK Silicon N Channel IGBT High Speed Power Switching Features  Short circuit withstand time (5 s typ.
)  Low collector to emitter saturation voltage VCE(sat) = 1.
6 V typ.
(IC = 22 A, VGE = 15 V, Ta = 25°C)  Gate to emitter voltage rating 30 V  Pb-free lead plating and chip bonding R07DS0166EJ0300 Rev.
3.
00 Jul 13, 2011 Outline RENESAS Package code: PRSS0004ZE-A (Package name: TO-3P) C G 1.
Gate 2.
Collector 3.
Emitter 1 2 3 E www.
DataSheet.
net/ Absolute Maximum Ratings (Ta = 25°C) Item Collector to emitter voltage Gate to emitter voltage Collector current Tc = 25°C Tc = 100°C Collector peak current Collector dissipation Junction to case thermal imp...


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