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2SD103

Part Number	2SD103
Manufacturer	Inchange Semiconductor
Description	Silicon NPN Power Transistors
Published	Jul 30, 2012
Detailed Description	isc Silicon NPN Power Transistors 2SD103 DESCRIPTION ·Collector-Emitter Breakdown Voltage- : V(BR)CEO= 50V(Min) ·High ...
Datasheet	2SD103 PDF File

Overview

isc Silicon NPN Power Transistors 2SD103 DESCRIPTION ·Collector-Emitter Breakdown Voltage- : V(BR)CEO= 50V(Min) ·High Power Dissipation- : PC= 25W(Max)@TC=25℃ ·Complement to Type 2SB503 ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·Designed for audio power amplifier, power switching, DC-DC converter and regulator applications.
ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage 80 V VCEO Collector-Emitter Voltage 50 V VEBO Emitter-Base Voltage 10 V IC Collector Current-Continuous 3 A IE Emitter Current-Continuous 3 A IB Base Current-Continuous PC Collector Power Dissipation...

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