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2N6297

Part Number	2N6297
Manufacturer	Central Semiconductor Corp
Description	COMPLEMENTARY SILICON DARLINGTON POWER TRANSISTORS
Published	Mar 22, 2005
Detailed Description	2N6294 2N6295 NPN 2N6296 2N6297 PNP COMPLEMENTARY SILICON DARLINGTON POWER TRANSISTORS w w w. c e n t r a l s e m i . c...
Datasheet	2N6297 PDF File

Overview

2N6294 2N6295 NPN 2N6296 2N6297 PNP COMPLEMENTARY SILICON DARLINGTON POWER TRANSISTORS w w w.
c e n t r a l s e m i .
c o m DESCRIPTION: The CENTRAL SEMICONDUCTOR 2N6294, 2N6296 series devices are complementary silicon Darlington power transistors, manufactured by the epitaxial base process, designed for high gain amplifier and medium speed switching applications.
MARKING: FULL PART NUMBER TO-66 CASE MAXIMUM RATINGS: (TC=25°C) Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Continuous Collector Current Peak Collector Current Continuous Base Current Power Dissipation Operating and Storage Junction Temperature Thermal Resistance SYMBOL VCBO VCEO VEBO IC ICM IB PD TJ, Tstg JC 2N6294 2N6296 60 2N6295 2N6297 80 60 80 5.
0 4.
0 8.
0 80 50 -65 to +200 3.
5 ELECTRICAL CHARACTERISTICS: (TC=25°C unless otherwise noted) SYMBOL TEST CONDITIONS MIN ICEV VCE=Rated VCEO, VEB=1.
5V ICEV VCE=Rated VCEO, VEB=1.
5V, TC=150°C ICEO VCE=½Rated VCEO IEBO VEB=5.
0V BV...

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