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2N6427

Part Number	2N6427
Manufacturer	Fairchild Semiconductor
Description	NPN Darlington Transistor
Published	Mar 22, 2005
Detailed Description	2N6427 / MMBT6427 Discrete POWER & Signal Technologies 2N6427 MMBT6427 C E C B TO-92 E SOT-23 Mark: 1V B NPN Dar...
Datasheet	2N6427 PDF File

Overview

2N6427 / MMBT6427 Discrete POWER & Signal Technologies 2N6427 MMBT6427 C E C B TO-92 E SOT-23 Mark: 1V B NPN Darlington Transistor This device is designed for applications requiring extremely high current gain at collector currents to 1.
0 A.
Sourced from Process 05.
See MPSA14 for characteristics.
Absolute Maximum Ratings* Symbol VCEO VCBO VEBO IC TJ, Tstg Collector-Emitter Voltage Collector-Base Voltage Emitter-Base Voltage Collector Current - Continuous TA = 25°C unless otherwise noted Parameter Value 40 40 12 1.
2 -55 to +150 Units V V V A °C Operating and Storage Junction Temperature Range *These ratings are limiting values above which the serviceability of any semiconducto...

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