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2SA1201

Silicon PNP Transistor

Description

TOSHIBA Transistor Silicon PNP Epitaxial Type (PCT process) 2SA1201 Voltage Amplifier Applications Power Amplifier Applications 2SA1201 Unit: mm High voltage: VCEO = −120 V High transition frequency: fT = 120 MHz (typ.) Small flat package PC = 1 to 2 W (mounted on a ceramic substrate) Complementary to 2SC2881 Absolute Maximum Ratings (Ta = 25°C)...

Toshiba Semiconductor

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