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2SA1296

Toshiba Semiconductor
Part Number 2SA1296
Manufacturer Toshiba Semiconductor
Description Silicon PNP Epitaxial Type Transistor
Published Mar 22, 2005
Detailed Description TOSHIBA Transistor Silicon PNP Epitaxial Type (PCT process) 2SA1296 Power Amplifier Applications Power Switching Applica...
Datasheet PDF File 2SA1296 PDF File

2SA1296
2SA1296

Overview
TOSHIBA Transistor Silicon PNP Epitaxial Type (PCT process) 2SA1296 Power Amplifier Applications Power Switching Applications 2SA1296 Unit: mm • Low saturation voltage: VCE (sat) = −0.
5 V (max) @IC = −2 A • Complementary to 2SC3266.
Absolute Maximum Ratings (Ta = 25°C) Characteristics Symbol Rating Unit Collector-base voltage VCBO −20 V Collector-emitter voltage VCEO −20 V Emitter-base voltage VEBO −6 V Collector current IC −2 A Base current IB −0.
5 A Collector power dissipation Junction temperature Storage temperature range PC 750 mW Tj 150 °C Tstg −55~150 °C JEDEC JEITA TO-92 SC-43 Note: Using continuously under heavy loads (e.
g.
the application of high TOSHIBA 2-5F1B temperature/current/voltage and the significant change in temperature, etc.
) may cause this product to decrease in the Weight: 0.
21 g (typ.
) reliability significantly even if the operating conditions (i.
e.
operating temperature/current/voltage, etc.
) are within the absolute maximum ratings.
Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook (“Handling Precautions”/“Derating Concept and Methods”) and individual reliability data (i.
e.
reliability test report and estimated failure rate, etc).
Electrical Characteristics (Ta = 25°C) Characteristics Symbol Test Condition Collector cut-off current Emitter cut-off current Collector-emitter breakdown voltage Emitter-base breakdown voltage DC current gain Collector-emitter saturation voltage Base-emitter voltage Transition frequency Collector output capacitance ICBO VCB = −20 V, IE = 0 IEBO VEB = −6 V, IC = 0 V (BR) CEO IC = −10 mA, IB = 0 V (BR) EBO IE = −0.
1 mA, IC = 0 hFE (1) (Note) VCE = −2 V, IC = −0.
1 A hFE (2) VCE (sat) VBE fT Cob VCE = −2 V, IC = −2 A IC = −2 A, IB = −0.
1 A VCE = −2 V, IC = −0.
1 A VCE = −2 V, IC = −0.
5 A VCB = −10 V, IE = 0, f = 1 MHz Note: hFE (1) Y: 120~240, GR: 200~400 Min Typ.
Max Unit ⎯ ⎯ −0.
1 μA ⎯ ⎯ −0.
1 μA −20 ⎯ ⎯ V −6 ...


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