Silicon PNP Epitaxial Type Transistor
Description
TOSHIBA Transistor Silicon PNP Epitaxial Type (PCT process)
2SA1297
Power Amplifier Applications Power Switching Applications
2SA1297
Unit: mm
Low saturation voltage: VCE (sat) = −0.5 V (max) @IC = −2 A Complementary to 2SC3267.
Absolute Maximum Ratings (Ta = 25°C)
Characteristics
Symbol
Rating
Unit
Collector-base voltage
VCBO −20 V
Collector-e...
Toshiba Semiconductor
2SA1297 PDF File
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