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2SA1312

Toshiba Semiconductor
Part Number 2SA1312
Manufacturer Toshiba Semiconductor
Description Silicon PNP Transistor
Published Mar 22, 2005
Detailed Description TOSHIBA Transistor Silicon PNP Epitaxial Type (PCT process) 2SA1312 Audio Frequency Low Noise Amplifier Applications 2S...
Datasheet PDF File 2SA1312 PDF File

2SA1312
2SA1312

Overview
TOSHIBA Transistor Silicon PNP Epitaxial Type (PCT process) 2SA1312 Audio Frequency Low Noise Amplifier Applications 2SA1312 Unit: mm  High voltage: VCEO = −120 V  Excellent hFE linearity: hFE (IC = −0.
1 mA)/ hFE (IC = −2 mA) h= 0.
95 (typ.
)  High hFE: hFE = 200 to 700  Low noise: NF (2) = 0.
2dB (typ.
), 3dB (max) at f = 1 kHz  Complementary to 2SC3324  Small package Absolute Maximum Ratings (Ta = 25°C) Characteristics Symbol Rating Unit Collector-base voltage Collector-emitter voltage Emitter-base voltage Collector current Base current Collector power dissipation Junction temperature Storage temperature range VCBO −120 V VCEO −120 V VEBO −5 V IC −100 mA IB −20 mA ...


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