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2SA1356

Part Number	2SA1356
Manufacturer	Toshiba Semiconductor
Description	Silicon PNP Epitaxial Type Transistor
Published	Mar 22, 2005
Detailed Description	TOSHIBA Transistor Silicon PNP Epitaxial Type (PCT Process) 2SA1356 Audio Power Amplifier Applications 2SA1356 Unit: mm...
Datasheet	2SA1356 PDF File

Overview

TOSHIBA Transistor Silicon PNP Epitaxial Type (PCT Process) 2SA1356 Audio Power Amplifier Applications 2SA1356 Unit: mm • Low saturation voltage: VCE (sat) = −0.
32 V (typ.
) (IC = −500 mA, IB = −50 mA) • High collector power dissipation: PC = 1.
2 W (Ta = 25°C) • Complementary to 2SC3419 Absolute Maximum Ratings (Tc = 25°C) Characteristics Symbol Rating Unit Collector-base voltage VCBO −40 V Collector-emitter voltage VCEO −40 V Emitter-base voltage VEBO −5 V Collector current IC −800 mA Base current IB −80 mA Collector power dissipation Ta = 25°C Tc = 25°C PC 1.
2 W 5 JEDEC ― Junction temperature Storage temperature range Tj 150 °C Tstg −55 to 150 °C JEITA TOSHIBA...

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