Silicon PNP Transistor
Description
TOSHIBA Transistor Silicon PNP Epitaxial Type (PCT process)
2SA1362
Low Frequency Power Amplifier Applications Power Switching Applications
2SA1362
Unit: mm
High DC current gain: hFE = 120 to 400 Low saturation voltage: VCE (sat) = −0.2 V (max)
(IC = −400 mA, IB = −8 mA) Suitable for driver stage of small motor
Small package
Absolute Maximum Ratin...
Toshiba Semiconductor
2SA1362 PDF File
Similar Datasheet