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AP09N70I-A

Advanced Power Electronics
Part Number AP09N70I-A
Manufacturer Advanced Power Electronics
Description N-CHANNEL ENHANCEMENT MODE POWER MOSFET
Published Aug 20, 2013
Detailed Description AP09N70I-A Pb Free Plating Product Advanced Power Electronics Corp. ▼ Dynamic dv/dt Rating ▼ Repetitive Avalanche Rated...
Datasheet PDF File AP09N70I-A PDF File

AP09N70I-A
AP09N70I-A

Overview
AP09N70I-A Pb Free Plating Product Advanced Power Electronics Corp.
▼ Dynamic dv/dt Rating ▼ Repetitive Avalanche Rated ▼ Fast Switching ▼ Simple Drive Requirement ▼ RoHS Compliant N-CHANNEL ENHANCEMENT MODE POWER MOSFET D BVDSS RDS(ON) ID 650V 0.
75Ω 9A G S Description The Advanced Power MOSFETs from APEC provide the designer with the best combination of fast switching, ruggedized device design, low on-resistance and cost-effectiveness.
GD S The TO-220CFM isolation package is universally preferred for all commercial-industrial through hole applications.
TO-220CFM(I) Absolute Maximum Ratings Symbol VDS VGS ID@TC=25℃ ID@TC=100℃ IDM PD@TC=25℃ EAS IAR EAR TSTG TJ Parameter Drain-Source Voltage Gate-Source Voltage Continuous Drain Current, V GS @ 10V Continuous Drain Current, V GS @ 10V Pulsed Drain Current 1 Rating 650 ±30 9 5 40 42 0.
34 2 Units V V A A A W W/ ℃ mJ A mJ ℃ ℃ Total Power Dissipation Linear Derating Factor Single Pulse Avalanche Energy Avalanche Current Repetitive Avalanche Energy Storage Temperature Range Operating Junction Temperature Range 305 9 9 -55 to 150 -55 to 150 Thermal Data Symbol Rthj-c Rthj-a Parameter Thermal Resistance Junction-case Thermal Resistance Junction-ambient Max.
Max.
Value 3 65 Units ℃/W ℃/W 200711051-1/4 Data & specifications subject to change without notice Free Datasheet http://www.
datasheet4u.
com/ AP09N70I-A Electrical Characteristics@Tj=25 C(unless otherwise specified) Symbol BVDSS ΔBVDSS/ΔTj o Parameter Drain-Source Breakdown Voltage Test Conditions VGS=0V, ID=1mA Min.
650 2 - Typ.
0.
6 4.
5 44 11 12 19 21 56 24 2660 170 10 Max.
Units 0.
75 4 10 100 ±100 V V/℃ Ω V S uA uA nA nC nC nC ns ns ns ns pF pF pF Breakdown Voltage Temperature Coefficient Reference to 25 ℃, ID=1mA RDS(ON) VGS(th) gfs IDSS IGSS Qg Qgs Qgd td(on) tr td(off) tf Ciss Coss Crss Static Drain-Source On-Resistance Gate Threshold Voltage Forward Transconductance Drain-Source Leakage Current (Tj=25 C) Drain-Source Leakage Current (Tj=150...


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