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ICE4N70

Icemos
Part Number ICE4N70
Manufacturer Icemos
Description N-Channel Enhancement Mode MOSFET
Published Oct 8, 2013
Detailed Description Preliminary Data Sheet ICE4N70 ICE4N70 N-Channel Enhancement Mode MOSFET Features • Low rDS(on) • Ultra Low Gate Charge...
Datasheet PDF File ICE4N70 PDF File

ICE4N70
ICE4N70

Overview
Preliminary Data Sheet ICE4N70 ICE4N70 N-Channel Enhancement Mode MOSFET Features • Low rDS(on) • Ultra Low Gate Charge • High dv/dt capability • High Unclamped Inductive Switching (UIS) capability • High peak current capability • Increased transconductance performance • Optimized design for high performance power systems HALOGEN Product Summary ID V(BR)DSS rDS(on) FREE TA=25oC ID=250uA VGS=10V VDS=480V D 4A 700V 1.
0Ω 21nC Max Min Typ Typ Qg G S T0220 ICEMOS AND ITS SISTER COMPANY 3D SEMI OWN THE FUNDAMENTAL PATENTS FOR SUPERJUNCTION MOSFETS.
THE MAJORITY OF THESE PATENTS HAVE 17 to 20 YEARS OF REMAINING LIFE.
THIS PORTFOLIO HAS GRANTED PATENTS ISSUED IN USA, CHINA, KOREA, JAPAN, TA...


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