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2SC2810

Part Number	2SC2810
Manufacturer	Inchange Semiconductor
Description	Silicon NPN Power Transistors
Published	Oct 17, 2013
Detailed Description	isc Silicon NPN Power Transistor INCHANGE Semiconductor 2SC2810 DESCRIPTION ·Low Collector Saturation Voltage ·Good Li...
Datasheet	2SC2810 PDF File

Overview

isc Silicon NPN Power Transistor INCHANGE Semiconductor 2SC2810 DESCRIPTION ·Low Collector Saturation Voltage ·Good Linearity of hFE ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·Designed for use in humidifier , DC/DC converter and general purpose applications ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage 500 V VCEO Collector-Emitter Voltage 400 V VEBO Emitter-Base Voltage 7 V IC Collector Current-Continuous 7 A ICM Collector Current-Pulse 14 A IB Base Current-Continuous PC Collector Power Dissipation @ TC=25℃ TJ Junction Temperature 3 A 50 W 150 ℃ Tstg Storage Temperature Range -55~150 ℃ isc Website：www.
iscsemi.
cn 1 isc & iscsemi is registered trademark isc Silicon NPN Power Transistor INCHANGE Semiconductor 2SC2810 ELECTRICAL CHARACTERISTICS TC=25℃ unless otherwise specified SYMBOL PARAMETER CONDITIONS V(BR)CEO Collector-Emitter Breakdow...

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