DatasheetsPDF.com

2SB979

Silicon PNP Darlington Power Transistor

Description

isc Silicon PNP Power Transistor 2SB979 DESCRIPTION ·Collector-Emitter Breakdown Voltage- : V(BR)CEO= -100V(Min) ·Good Linearity of hFE ·Wide Area of Safe Operation ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·Designed for high power amplifications. ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER ...

Inchange Semiconductor

Download 2SB979 Datasheet

Similar Datasheet

2SB900 SILICON POWER TRANSISTOR - SavantIC
2SB900 Silicon PNP Power Transistor - Inchange Semiconductor
2SB901 PNP Transistor - INCHANGE
2SB902 PNP Epitaxial Planar Silicon Transistors - Panasonic
2SB903 PNP Transistor - Sanyo Semicon Device
2SB903 SILICON POWER TRANSISTOR - SavantIC
2SB903 Silicon PNP Power Transistor - Inchange Semiconductor
2SB904 PNP Transistor - Sanyo Semicon Device
2SB904 SILICON POWER TRANSISTOR - SavantIC
2SB904 Silicon PNP Power Transistor - Inchange Semiconductor

@ 2014 :: Datasheetspdf.com :: Semiconductors datasheet search & download site. (Privacy Policy & Contact)