Silicon PNP Power Transistors
Description
isc Silicon PNP Power Transistor
INCHANGE Semiconductor
2SB966
DESCRIPTION ·Low Collector Saturation Voltage
: VCE(sat)= -0.65V(Typ)@IC= -5.0A ·Collector-Emitter Breakdown Voltage-
: V(BR)CEO= -120V(Min) ·Complement to Type 2SD1289 ·100% avalanche tested ·Minimum Lot-to-Lot variations for robust device
performance and reliable operation
APPLICATIONS ·Audio...
Inchange Semiconductor
2SB966 PDF File
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