Silicon PNP Power Transistor
Description
isc Silicon PNP Power Transistor
2SB954
DESCRIPTION ·Low Collector Saturation Voltage-
: VCE(sat)= -1.0V(Max)@IC= -1A ·Good Linearity of hFE ·Minimum Lot-to-Lot variations for robust device
performance and reliable operation
APPLICATIONS ·Designed for power amplifications.
ABSOLUTE MAXIMUM RATINGS(Ta=25℃)
SYMBOL
PARAMETER
VALUE
UNIT
VCBO
Collector-...
Inchange Semiconductor
2SB954 PDF File
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