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2SB944

Part Number	2SB944
Manufacturer	Inchange Semiconductor
Description	Silicon PNP Power Transistor
Published	Oct 25, 2013
Detailed Description	isc Silicon PNP Power Transistor 2SB944 DESCRIPTION ·Low Collector Saturation Voltage : VCE(sat)= -0.5V(Max)@ IC= -3A ...
Datasheet	2SB944 PDF File

Overview

isc Silicon PNP Power Transistor 2SB944 DESCRIPTION ·Low Collector Saturation Voltage : VCE(sat)= -0.
5V(Max)@ IC= -3A ·Collector-Emitter Breakdown Voltage- : V(BR)CEO= -80V (Min) ·Good Linearity of hFE ·Complement to Type 2SD1269 ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·Designed for power amplification.
ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage -130 V VCEO Collector-Emitter Voltage -80 V VEBO Emitter-Base Voltage -7 V IC Collector Current-Continuous -4 A ICM Collector Current-Peak Collector Power Dissipation @ TC=25℃ PC Collector Power Dissipation @ Ta=25℃ TJ Ju...

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