Silicon PNP Power Transistor
Description
isc Silicon PNP Power Transistor
2SB947
DESCRIPTION ·Low Collector Saturation Voltage-
: VCE(sat)= -0.6V(Max)@IC= -7A ·High Speed Switching ·Minimum Lot-to-Lot variations for robust device
performance and reliable operation
APPLICATIONS ·Designed for low-voltage switching applications.
ABSOLUTE MAXIMUM RATINGS(Ta=25℃)
SYMBOL
PARAMETER
VALUE
UNIT
VCB...
Inchange Semiconductor
2SB947 PDF File
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