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2SC2408

Part Number	2SC2408
Manufacturer	Inchange Semiconductor
Description	Silicon NPN RF Transistor
Published	Oct 29, 2013
Detailed Description	isc Silicon NPN RF Transistor INCHANGE Semiconductor 2SC2408 DESCRIPTION ·Low Noise NF = 2.4 dB TYP. ;@ f = 200 MHz ·H...
Datasheet	2SC2408 PDF File

Overview

isc Silicon NPN RF Transistor INCHANGE Semiconductor 2SC2408 DESCRIPTION ·Low Noise NF = 2.
4 dB TYP.
;@ f = 200 MHz ·High Gain ︱S21e︱2 = 21 dB TYP.
;@ f = 200 MHz ·Minimum Lot-to-Lot variations for robust device performance and reliable operation.
APPLICATIONS ·Designed for use in high frequency wide band amplifier.
ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage 35 V VCEO Collector-Emitter Voltage 18 V VEBO Emitter-Base Voltage 3 V IC Collector Current-Continuous PC Collector Power Dissipation @TC=25℃ TJ Junction Temperature 150 mA 0.
6 W 150 ℃ Tstg Storage Temperature Range -65~150 ℃ isc website：www.
iscsemi.
cn 1 is...

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