JDV2S17S
TOSHIBA DIODE Silicon Epitaxial Planar Type
JDV2S17S
VCO for UHF Band Radio
High Capacitance Ratio : C1V/C4V = 2.1 (typ.) Low Series Resistance : rs = 0.6 Ω (typ.) This device is suitable for use in a small-size tuner. Unit: mm
Maximum Ratings (Ta = 25°C)
Characteristics Reverse voltage Junction temperature Storage temperature range Symbol V...
