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TK80E06K3A

Toshiba

Silicon N-channel MOS


Description
TK80E06K3A MOSFETs Silicon N-channel MOS (U-MOS ) TK80E06K3A 1. Applications Switching Voltage Regulators 2. Features (1) (2) (3) Low drain-source on-resistance: RDS(ON) = 4.8 mΩ (typ.) Low leakage current: IDSS = 10 µA (max) (VDS = 60 V) Enhancement mode: Vth = 3.0 to 4.0 V (VDS = 10 V, ID = 1 mA) 3. Packaging and Internal Circuit 1: Gate 2: Drain (h...



Toshiba

TK80E06K3A

PDF File TK80E06K3A PDF File


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