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TPC8126

Toshiba
Part Number TPC8126
Manufacturer Toshiba
Description MOSFET
Published Nov 11, 2013
Detailed Description TPC8126 TOSHIBA Field Effect Transistor Silicon P Channel MOS Type (U-MOSⅥ) TPC8126 Lithium Ion Battery Applications Po...
Datasheet PDF File TPC8126 PDF File

TPC8126
TPC8126

Overview
TPC8126 TOSHIBA Field Effect Transistor Silicon P Channel MOS Type (U-MOSⅥ) TPC8126 Lithium Ion Battery Applications Power Management Switch Applications • • • • Small footprint due to small and thin package Low drain-source ON-resistance: RDS (ON) = 7.
5 mΩ (typ.
) Low leakage current: IDSS = −10 μA (max) (VDS = −30 V) Enhancement mode: Vth = −0.
8 to −2.
0 V (VDS = −10 V, ID = −0.
5mA) Unit: mm Absolute Maximum Ratings (Ta = 25°C) Characteristics Drain-source voltage Drain-gate voltage (RGS = 20 kΩ) Gate-source voltage Drain current DC (Note 1) Symbol VDSS VDGR VGSS ID IDP PD PD EAS IAR Tch Tstg Rating −30 −30 −25/+20 −11 −44 1.
9 1.
0 79 −11 150 −55 to 150 Unit V V V A W W mJ A °C °C Pulse (N...


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