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33N25

Fairchild Semiconductor
Part Number 33N25
Manufacturer Fairchild Semiconductor
Description FDB33N25
Published Nov 17, 2013
Detailed Description FDB33N25 250V N-Channel MOSFET September 2005 UniFET FDB33N25 250V N-Channel MOSFET Features • 33A, 250V, RDS(on) = 0....
Datasheet PDF File 33N25 PDF File

33N25
33N25

Overview
FDB33N25 250V N-Channel MOSFET September 2005 UniFET FDB33N25 250V N-Channel MOSFET Features • 33A, 250V, RDS(on) = 0.
094Ω @VGS = 10 V • Low gate charge ( typical 36.
8 nC) • Low Crss ( typical 39 pF) • Fast switching • 100% avalanche tested • Improved dv/dt capability TM Description These N-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar stripe, DMOS technology.
This advanced technology has been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand high energy pulse in the avalanche and commutation mode.
These devices are well suited for high efficient switched mode power suppl...


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