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HF150-50F

Part Number	HF150-50F
Manufacturer	Advanced Semiconductor
Description	NPN SILICON RF POWER TRANSISTOR
Published	Mar 23, 2005
Detailed Description	HF150-50F NPN SILICON RF POWER TRANSISTOR DESCRIPTION: The ASI HF150-50F is Designed for PACKAGE STYLE .500 4L FLG .11...
Datasheet	HF150-50F PDF File

Overview

HF150-50F NPN SILICON RF POWER TRANSISTOR DESCRIPTION: The ASI HF150-50F is Designed for PACKAGE STYLE .
500 4L FLG .
112x45° A FULL R L FEATURES: • PG = 14 dB min.
at 150 W/30 MHz • IMD3 = 100 dBc max.
at 150 W (PEP) • Omnigold™ Metalization System C B E B D G F C Ø.
125 NOM.
E E H MAXIMUM RATINGS IC VCBO VCEO VEBO PDISS TJ T STG θ JC 10 A DIM MINIMUM inches / mm I J K MAXIMUM inches / mm 110 V 55 V 4.
0 V 233 W @ TC = 25 C -65 OC to +200 OC -65 C to +150 C 0.
75 OC/W O O O A B C D E F G H I J K L .
220 / 5.
59 .
125 / 3.
18 .
245 / 6.
22 .
720 / 18.
28 .
125 / 3.
18 .
970 / 24.
64 .
495 / 12.
57 .
003 / 0.
08 .
090 / 2.
29 .
150 / 3.
81 .
980 / 24.
89 .
230 / 5.
84 .
255 / 6.
48 .
7.
30 / 18.
54 .
980 / 24.
89 .
505 / 12.
83 .
007 / 0.
18 .
110 / 2.
79 .
175 / 4.
45 .
280 / 7.
11 1.
050 / 26.
67 ORDER CODE: ASI10612 CHARACTERISTICS SYMBOL BV CBO BV CES BV CEO BV EBO ICEO ICES hFE Cob GP IMD3 ηC IC = 100 mA IC = 100 mA IC = 100 mA IE = 10 mA VCE = 30 V VCE = 60 V VCE = 6 V VCB = 50 V TC = 25 OC NONETEST CONDITIO...

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