DatasheetsPDF.com

P2N80

Fairchild Semiconductor
Part Number P2N80
Manufacturer Fairchild Semiconductor
Description FQP2N80
Published Jan 27, 2014
Detailed Description FQP2N80 — N-Channel QFET® MOSFET November 2013 FQP2N80 N-Channel QFET® MOSFET 800 V, 2.4 A, 6.3 Ω Description This N-C...
Datasheet PDF File P2N80 PDF File

P2N80
P2N80

Overview
FQP2N80 — N-Channel QFET® MOSFET November 2013 FQP2N80 N-Channel QFET® MOSFET 800 V, 2.
4 A, 6.
3 Ω Description This N-Channel enhancement mode power MOSFET is produced using Fairchild Semiconductor’s proprietary planar stripe and DMOS technology.
This advanced MOSFET technology has been especially tailored to reduce on-state resistance, and to provide superior switching performance and high avalanche energy strength.
These devices are suitable for switched mode power supplies, active power factor correction (PFC), and electronic lamp ballasts.
Features • 2.
4 A, 800 V, RDS(on) = 6.
3 Ω (Max.
) @ VGS = 10 V, ID = 1.
2 A • Low Gate Charge (Typ.
12 nC) • Low Crss (Typ.
5.
5 pF) • 100% Avalanche Tested D GD S G TO-220 S Absolute Maximum Ratings Symbol VDSS ID IDM VGSS EAS IAR EAR dv/dt PD TJ, TSTG TL TC = 25°C unless otherwise noted.
Parameter Drain-Source Voltage - Continuous (TC = 25°C) Drain Current - Continuous (TC = 100°C) Drain Current - Pulsed (Note 1) FQP2N80 800 2.
4 1.
52 9.
6 ± 30 (Note 2) (Note 1) (Note 1) (Note 3) Unit V A A A V mJ A mJ V/ns W W/°C °C °C Gate-Source Voltage Single Pulsed Avalanche Energy Avalanche Current Repetitive Avalanche Energy Peak Diode Recovery dv/dt Power Dissipation (TC = 25°C) - Derate above 25°C Operating and Storage Temperature Range Maximum Lead Temperature for Soldering, 1/8" from Case for 5 seconds 180 2.
4 8.
5 4.
0 85 0.
68 -55 to +150 300 Thermal Characteristics Symbol RθJC RθJA Parameter Thermal Resistance, Junction-to-Case, Max.
Thermal Resistance, Junction-to-Ambient, Max.
FQP2N80 1.
47 62.
5 Unit °C/W °C/W ©2000 Fairchild Semiconductor Corporation FQP2N80 Rev.
C1 1 www.
fairchildsemi.
com Free Datasheet http://www.
datasheet4u.
com/ FQP2N80 — N-Channel QFET® MOSFET Package Marking and Ordering Information Part Number FQP2N80 Top Mark FQP2N80 Package TO-220 Packing Method Tube Reel Size N/A Tape Width N/A Quantity 50 units Electrical Characteristics Symbol Parameter TC = 25°C unless otherwise noted.
Test Condition...


Similar Datasheet


@ 2014 :: Datasheetspdf.com :: Semiconductors datasheet search & download site. (Privacy Policy & Contact)