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IRGP4066-EPBF

Part Number	IRGP4066-EPBF
Manufacturer	International Rectifier
Description	INSULATED GATE BIPOLAR TRANSISTOR
Published	Feb 5, 2014
Detailed Description	PD - 97577 INSULATED GATE BIPOLAR TRANSISTOR Features • • • • • • • • • Low VCE (ON) Trench IGBT Technology Low Switchi...
Datasheet	IRGP4066-EPBF PDF File

Overview

PD - 97577 INSULATED GATE BIPOLAR TRANSISTOR Features • • • • • • • • • Low VCE (ON) Trench IGBT Technology Low Switching Losses Maximum Junction Temperature 175 °C 5 μS short circuit SOA Square RBSOA 100% of The Parts Tested for ILM Positive VCE (ON) Temperature Coefficient Tight Parameter Distribution Lead Free Package IRGP4066PbF IRGP4066-EPbF C VCES = 600V IC(Nominal) = 75A G E tSC ≥ 5μs, TJ(max) = 175°C n-channel VCE(on) typ.
= 1.
7V Benefits • High Efficiency in a Wide Range of Applications • Suitable for a Wide Range of Switching Frequencies due to Low VCE (ON) and Low Switching Losses • Rugged Transient Performance for Increased Reliability • Excellent Current Sharing in Paral...

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IRGP4066-EPBF INSULATED GATE BIPOLAR TRANSISTOR - International Rectifier

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