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FDP10N60NZ

Fairchild Semiconductor
Part Number FDP10N60NZ
Manufacturer Fairchild Semiconductor
Description N-Channel MOSFET
Published Feb 10, 2014
Detailed Description FDP10N60NZ / FDPF10N60NZ — N-Channel UniFETTM II MOSFET November 2013 N-Channel UniFETTM II MOSFET 600 V, 10 A, 750 mΩ...
Datasheet PDF File FDP10N60NZ PDF File

FDP10N60NZ
FDP10N60NZ

Overview
FDP10N60NZ / FDPF10N60NZ — N-Channel UniFETTM II MOSFET November 2013 N-Channel UniFETTM II MOSFET 600 V, 10 A, 750 mΩ Features • RDS(on) = 640 mΩ (Typ.
) @ VGS = 10 V, ID = 5 A • Low Gate Charge (Typ.
23 nC) • Low Crss (Typ.
10 pF) • 100% Avalanche Tested • Improved dv/dt Capability • ESD Improved Capability • RoHS Compliant FDP10N60NZ / FDPF10N60NZ Description UniFETTM II MOSFET is Fairchild Semiconductor’s high voltage MOSFET family based on advanced planar stripe and DMOS technology.
This advanced MOSFET family has the smallest on-state resistance among the planar MOSFET, and also provides superior switching performance and higher avalanche energy strength.
In addition, internal gate-source ESD diode allows UniFET II MOSFET to withstand over 2kV HBM surge stress.
This device family is suitable for switching power converter applications such as power factor correction (PFC), flat panel display (FPD) TV power, ATX and electronic lamp ballasts.
Applications • LCD/ LED/ PDP TV • Lig...


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