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TTA1943

Toshiba
Part Number TTA1943
Manufacturer Toshiba
Description Silicon PNP Transistor
Published Feb 20, 2014
Detailed Description TOSHIBA Transistor Silicon PNP Epitaxial Type TTA1943 Power Amplifier Applications • High collector voltage: VCEO = -230...
Datasheet PDF File TTA1943 PDF File

TTA1943
TTA1943

Overview
TOSHIBA Transistor Silicon PNP Epitaxial Type TTA1943 Power Amplifier Applications • High collector voltage: VCEO = -230 V (min) • Complementary to TTC5200 • Recommended for 100-W high-fidelity audio frequency amplifier output stage.
TTA1943 Unit: mm Absolute Maximum Ratings (Ta = 25°C) Characteristics Symbol Rating Unit Collector-base voltage Collector-emitter voltage Emitter-base voltage Collector current Base current Collector power dissipation (Tc=25°C) Junction temperature Storage temperature range VCBO VCEO VEBO IC IB PC Tj Tstg -230 V -230 V -5 V -15 A -1.
5 A 150 W 150 °C −55 to 150 °C 1.
BASE 2.
COLLECTOR(HEAT SINK) 3.
EMITTER JEDEC ― JEITA ― TOSHIBA 2-21F1A Weight : 9.
75 g (typ) Note1 : Using continuously under heavy loads (e.
g.
the application of high temperature/current/voltage and the significant change in temperature, etc.
) may cause this product to decrease in the reliability significantly even if the operating conditions (i.
e.
operating temp...


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