Complementary N-P Channel Trench MOSFET
Description
MDS9651– Complementary N-P Channel Trench MOSFET
MDS9651
Complementary N-P Channel Trench MOSFET
General Description
The MDS9651 uses advanced MagnaChip’s MOSFET Technology to provide low on-state resistance, high switching performance and excellent reliability
Features
N-Channel VDS = 30V ID = 6.9A @ VGS = 10V RDS(ON) <28mΩ @ VGS = 10V <42mΩ @ VGS = 4.5V ...
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