Silicon Carbide Power MOSFET
Description
CMF10120D-Silicon Carbide Power MOSFET Z-FeTTM MOSFET
Features Package
VDS ID(MAX)
= 1200 V = 24 A
N-Channel Enhancement Mode
RDS(on)
= 160mΩ
High Speed Switching with Low Capacitances High Blocking Voltage with Low RDS(on) Easy to Parallel and Simple to Drive Avalanche Ruggedness Resistant to Latch-Up Halogen Free, ...
Similar Datasheet
