Silicon P Channel MOS FET Power Switching
Description
Preliminary Datasheet
RQJ0202VGDQA
Silicon P Channel MOS FET Power Switching
Features
Low on-resistance RDS(on) = 83 mΩ typ (VGS = –4.5 V, ID = –1.4 A) Low drive current High speed switching 2.5 V gate drive R07DS0291EJ0500 Rev.5.00 Jan 10, 2014
Outline
RENESAS Package code: PLSP0003ZB-A (Package name: MPAK)
3 D
3 2 1 2
G
1. Source 2. Gate 3. Dr...
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