INSULATED GATE BIPOLAR TRANSISTOR
Description
PD - 95643A
INSULATED GATE BIPOLAR TRANSISTOR
Features
Low VCE (on) Non Punch Through IGBT Technology. 10µs Short Circuit Capability. Square RBSOA. Positive VCE (on) Temperature Coefficient. Maximum Junction Temperature rated at 175°C. Lead-Free.
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IRGB4B60KPbF IRGS4B60KPbF IRGSL4B60KPbF
VCES = 600V IC = 6.8A, TC=100°C
G E
tsc > 10µs, TJ=150°...
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