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IXTY1R4N100P

IXYS
Part Number IXTY1R4N100P
Manufacturer IXYS
Description Power MOSFET
Published May 20, 2014
Detailed Description PolarTM Power MOSFETs N-Channel Enhancement Mode Avalanche Rated IXTY1R4N100P IXTA1R4N100P IXTP1R4N100P VDSS ID25 RDS...
Datasheet PDF File IXTY1R4N100P PDF File

IXTY1R4N100P
IXTY1R4N100P

Overview
PolarTM Power MOSFETs N-Channel Enhancement Mode Avalanche Rated IXTY1R4N100P IXTA1R4N100P IXTP1R4N100P VDSS ID25 RDS(on) = 1000V = 1.
4A ≤ 11.
8Ω TO-252 (IXTY) G Symbol VDSS VDGR VGSS VGSM ID25 IDM IA EAS dv/dt PD TJ TJM Tstg TL TSOLD FC Md Weight Test Conditions TJ = 25°C to 150°C TJ = 25°C to 150°C, RGS = 1MΩ Continuous Transient TC = 25°C TC = 25°C, Pulse Width Limited by TJM TC = 25°C TC = 25°C IS ≤ IDM, VDD ≤ VDSS, TJ ≤ 150°C TC = 25°C Maximum Ratings 1000 1000 ±20 ±30 1.
4 3.
0 1.
4 100 10 63 -55 .
.
.
+150 150 -55 .
.
.
+150 V V V V A A A mJ V/ns W °C °C °C °C °C N/lb.
Nm/lb.
in.
g g g Features z z z z z S D (Tab) TO-263 AA (IXTA) G S D (Tab) TO-220AB (IXTP) G DS D (Tab) 1.
6mm...


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