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2SA1386B

NELL SEMICONDUCTOR
Part Number 2SA1386B
Manufacturer NELL SEMICONDUCTOR
Description Silicon PNP Transistor
Published May 25, 2014
Detailed Description SEMICONDUCTOR 2SA1386B Series Silicon PNP Epitaxial Planar Transistor (Complement to type 2SC3519B) -15A/-160V,-180V/13...
Datasheet PDF File 2SA1386B PDF File

2SA1386B
2SA1386B

Overview
SEMICONDUCTOR 2SA1386B Series Silicon PNP Epitaxial Planar Transistor (Complement to type 2SC3519B) -15A/-160V,-180V/130W 5 .
0 ±0 .
2 RoHS RoHS Nell High Power Products 2.
0 19.
9±0.
3 4.
0 TO-3P(B) 20.
0 min 4.
0 max 3 2 1.
8 15.
6±0.
4 9.
6 4.
8±0.
2 2.
0±0.
1 Φ 3.
2 ± 0,1 +0.
2 1.
05 -0.
1 5.
45±0.
1 C E +0.
2 0.
65 -0.
1 FEATURES Recommend for 105W high Fiderity audio frequency amplifier output stage Complement to type 2SC3519B & 2SC3519B-A 5.
45±0.
1 B 1.
4 C 1 2 3 B APPLICATIONS Audio and general purpose E PNP All dimensions in millimeters ABSOLUTE MAXIMUM RATINGS (Ta = 25°C) VALUE SYMBOL VCBO V CEO V EBO I CP (I CM ) IC IB PC Tj T stg PARAMETER Collector to base voltage Collector to emitter voltage Emitter to base voltage Peak collector current Collector current Base current Collector power dissipation Derate above 25 ° C Junction temperature Storage temperature T C = 25 °C 2SA1386B 2SA1386B-A -160 -160 -5 -30 -15 -4 130 1.
04 150 -55 to 150 ºC W W/°C A -180 -180 V UNIT THERMAL CHARACTERISTICS (Ta=25°C unless otherwise specified) SYMBOL Rth(j-a) PARAMETER Maximum thermal resistance, junction to ambient VALUE 1.
65 UNIT °C/W http://www.
Datasheet4U.
com www.
nellsemi.
com P age 1 of 3 SEMICONDUCTOR 2SA1386B Series RoHS RoHS Nell High Power Products ELECTRICAL CHARACTERISTICS (Ta = 25°C) SYMBOL V (BR)CEO ICBO I EBO h FE V CE(sat) fT t on t stg tf C OB PARAMETER Collector to emitter breakdown voltage CONDITIONS I C = -25mA, l B = 0 V CB = -160V, l E = 0 V CB = -180V, l E = 0 V EB = -5V, I C = 0 V CE = -4V, l C = -5A l C = -5A, l B = -0.
5A V CE = -12V, l C = -2A l C = -10A, l B1 = -1.
0A, l B2 = 1.
0A V CC = -40V, R L = 4Ω, V BB1 = -10V, V BB2 = 5V V CB = -10V, l E = 0, f test =1MHz 40 0.
30 0.
70 0.
20 500 pF µs 50 -2.
0 V MHz 2SC3519B 2SC3519B-A 2SC3519B 2SC3519B-A min -160 -180 -100 -100 -100 µA typ max UNIT V Collector cutoff current Emitter cutoff current Forward current transfer ratio Collector to emitter saturation voltage Transition frequency (Current gain ...


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