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PBSS4360Z

NXP
Part Number PBSS4360Z
Manufacturer NXP
Description 3A NPN low VCEsat (BISS) transistor
Published Jul 19, 2014
Detailed Description PBSS4360Z 26 February 2014 SO T2 23 60 V, 3 A NPN low VCEsat (BISS) transistor Product data sheet 1. General descri...
Datasheet PDF File PBSS4360Z PDF File

PBSS4360Z
PBSS4360Z

Overview
PBSS4360Z 26 February 2014 SO T2 23 60 V, 3 A NPN low VCEsat (BISS) transistor Product data sheet 1.
General description NPN low VCEsat Breakthrough In Small Signal (BISS) transistor in a medium power SOT223 (SC-73) Surface-Mounted Device (SMD) plastic package.
PNP complement: PBSS5360Z.
2.
Features and benefits • • • • Low collector-emitter saturation voltage VCEsat High collector current capability IC and ICM High energy efficiency due to less heat generation AEC-Q101 qualified 3.
Applications • • • • • • DC-to-DC conversion Supply line switching Battery charger LCD backlighting Driver in low supply voltage applications (e.
g.
lamps and LEDs) Inductive load driver (e.
g.
relays, buzze...


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