DatasheetsPDF.com

BUK653R5-55C

NXP Semiconductors
Part Number BUK653R5-55C
Manufacturer NXP Semiconductors
Description N-Channel MOSFET
Published Aug 21, 2014
Detailed Description BUK653R5-55C N-channel TrenchMOS intermediate level FET Rev. 1 — 27 October 2010 Product data sheet 1. Product profile ...
Datasheet PDF File BUK653R5-55C PDF File

BUK653R5-55C
BUK653R5-55C

Overview
BUK653R5-55C N-channel TrenchMOS intermediate level FET Rev.
1 — 27 October 2010 Product data sheet 1.
Product profile 1.
1 General description Intermediate level gate drive N-channel enhancement mode Field-Effect Transistor (FET) in a plastic package using advanced TrenchMOS technology.
This product has been designed and qualified to the appropriate AEC Q101 standard for use in high performance automotive applications.
1.
2 Features and benefits „ AEC Q101 compliant „ Suitable for standard and logic level gate drive sources „ Suitable for thermally demanding environments due to 175 °C rating 1.
3 Applications „ 12 V and 24 V Automotive systems „ Electric and electro-hydraulic power steering „ Motors, lamps and solenoid control „ Start-Stop micro-hybrid applications „ Transmission control „ Ultra high performance power switching 1.
4 Quick reference data Table 1.
Symbol VDS ID Ptot Quick reference data Parameter drain-source voltage drain current total power dissipation drain-source on...


Similar Datasheet


Since 2006. D4U Semicon,
Electronic Components Datasheet Search Site. (Privacy Policy & Contact)