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TPCP8111

Toshiba Semiconductor
Part Number TPCP8111
Manufacturer Toshiba Semiconductor
Description Silicon P-Channel MOSFET
Published Aug 27, 2014
Detailed Description MOSFETs Silicon P-Channel MOS (U-MOS) TPCP8111 1. Applications • Motor Drivers • Mobile Equipment 2. Features (1) AEC-Q...
Datasheet PDF File TPCP8111 PDF File

TPCP8111
TPCP8111

Overview
MOSFETs Silicon P-Channel MOS (U-MOS) TPCP8111 1.
Applications • Motor Drivers • Mobile Equipment 2.
Features (1) AEC-Q101 qualified (2) Small, thin package (3) Small gate charge: QSW = 5.
2 nC (typ.
) (4) Low drain-source on-resistance: RDS(ON) = 90 mΩ (typ.
) (VGS = -10 V) (5) Low leakage current: IDSS = -10 µA (max) (VDS = -60 V) (6) Enhancement mode: Vth = -2 to -3 V (VDS = -10 V, ID = -1 mA) 3.
Packaging and Internal Circuit TPCP8111 PS-8 1, 2, 3: Source 4: Gate 5, 6, 7, 8: Drain ©2016 Toshiba Corporation 1 Start of commercial production 2012-10 2016-02-23 Rev.
3.
0 TPCP8111 4.
Absolute Maximum Ratings (Note) (Ta = 25  unless otherwise specified) Characteristics Symbol Rating Unit Drain-source voltage VDSS -60 V Gate-source voltage VGSS -20/+10 Drain current (DC) (Note 1) ID -3 A Drain current (pulsed) (Note 1) IDP -12 Power dissipation (t = 5 s) (Note 2) PD 1.
96 W Power dissipation (t = 5 s) (Note 3) PD 0.
94 Single-pulse avalanche energy (Not...


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