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TPCP8303

Toshiba Semiconductor
Part Number TPCP8303
Manufacturer Toshiba Semiconductor
Description Field Effect Transistor
Published Aug 27, 2014
Detailed Description TPCP8303 TOSHIBA Field Effect Transistor Silicon P Channel MOS Type (U-MOSV) TPCP8303 Lithium Ion Battery Applications ...
Datasheet PDF File TPCP8303 PDF File

TPCP8303
TPCP8303

Overview
TPCP8303 TOSHIBA Field Effect Transistor Silicon P Channel MOS Type (U-MOSV) TPCP8303 Lithium Ion Battery Applications Notebook PC Applications Portable Equipment Applications • • • • Low drain-source ON-resistance: RDS(ON) = 41 mΩ (typ.
) High forward transfer admittance: |Yfs| = 12 S (typ.
) Low leakage current: IDSS = −10 μA (max) (VDS = −20 V) Enhancement mode: Vth = −0.
3 to −1.
0 V (VDS = −10 V, ID = −1 mA) Unit: mm 0.
33±0.
05 0.
05 M A 8 5 2.
4±0.
1 0.
475 1 4 0.
65 2.
9±0.
1 B A 0.
05 M B (Q1, Q2 Common) Drain-source voltage Absolute Maximum Ratings (Ta = 25°C) S 0.
8±0.
05 0.
025 S 0.
17±0.
02 0.
28 +0.
1 -0.
11 +0.
13 Characteristic Drain-gate voltage (RGS = 20 kΩ) Gate-source voltage Drain c...


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