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TPCC8105

Toshiba Semiconductor
Part Number TPCC8105
Manufacturer Toshiba Semiconductor
Description Silicon P-Channel MOSFET
Published Aug 30, 2014
Detailed Description TPCC8105 TOSHIBA Field Effect Transistor Silicon P-Channel MOS Type (U-MOSⅥ) TPCC8105 Lithium Ion Battery Applications ...
Datasheet PDF File TPCC8105 PDF File

TPCC8105
TPCC8105

Overview
TPCC8105 TOSHIBA Field Effect Transistor Silicon P-Channel MOS Type (U-MOSⅥ) TPCC8105 Lithium Ion Battery Applications Power Management Switch Applications Unit: mm • Small footprint due to a small and thin package • Low drain-source ON-resistance: RDS (ON) = 6.
0 mΩ (typ.
)( VGS = −10 V) • Low leakage current: IDSS = −10 µA (max) (VDS = −30 V) • Enhancement mode: Vth = −0.
8 to −2.
0 V (VDS = −10 V, ID = −0.
5 mA) Absolute Maximum Ratings (Ta = 25°C) Characteristic Symbol Rating Unit Drain-source voltage Drain-gate voltage (RGS = 20 kΩ) Gate-source voltage Drain current DC (Note 1) Pulsed (Note 1) Drain power dissipation (Tc = 25°C) Drain power dissipation (t = 10 s) (Note 2a) Drain power dissipation (t = 10 s) (Note 2b) Single-pulse avalanche energy (Note 3) Avalanche current Channel temperature Storage temperature range VDSS VDGR VGSS ID IDP PD PD PD EAS IAR Tch Tstg −30 V −30 V −25/+20 V −23 A −69 30 W 1.
9 W 0.
7 W 138 mJ −23 A 150 °C −55 to ...


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