INSULATED GATE BIPOLAR TRANSISTOR
Description
PD - 9.784A
IRGB420U
INSULATED GATE BIPOLAR TRANSISTOR
Features
Switching-loss rating includes all "tail" losses Optimized for high operating frequency (over 5kHz) See Fig. 1 for Current vs. Frequency curve
G E C
UltraFast IGBT
VCES = 500V VCE(sat) ≤ 3.0V
@VGE = 15V, I C = 7.5A
n-channel
Description
Insulated Gate Bipolar Transistors (IGBTs) from Int...
International Rectifier
IRGB420U PDF File
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