MOSFETs
Description
TK12A50E
MOSFETs Silicon N-Channel MOS (π-MOS)
TK12A50E
1. Applications
Switching Voltage Regulators
2. Features
(1) (2) (3) Low drain-source on-resistance: RDS(ON) = 0.40 Ω (typ.) (VGS = 10 V) Low leakage current: IDSS = 10 µA (max) (VDS = 500 V) Enhancement mode: Vth = 2.5 to 4.0 V (VDS = 10 V, ID = 1.2 mA)
3. Packaging and Internal Circuit
1: Gate ...
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