SSD3030N
N-Channel Enhancement Mode MOSFET
Product Summary
VDS (V) ID (A)
RDS(ON) (m ) Max
D
TO-252
17 @VGS = 10V 30V 30A 35 @VGS = 4.5V
G S
D
FEATURES
Super high dense cell design for low RDS(ON). Rugged and reliable. TO-252 package. Pb Free.
S G
ABSOLUTE MAXIMUM RATINGS (TA = 25 C unless otherwise noted)
Parameter
Drain-Source Voltage Gate-Source Volt...
