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AP2306AGN-HF-3

Advanced Power Electronics
Part Number AP2306AGN-HF-3
Manufacturer Advanced Power Electronics
Description N-CHANNEL ENHANCEMENT MODE POWER MOSFET
Published Sep 22, 2014
Detailed Description Advanced Power Electronics Corp. AP2306AGN-HF-3 N-channel Enhancement-mode Power MOSFET Supports 2.5V Gate Drive Lower...
Datasheet PDF File AP2306AGN-HF-3 PDF File

AP2306AGN-HF-3
AP2306AGN-HF-3

Overview
Advanced Power Electronics Corp.
AP2306AGN-HF-3 N-channel Enhancement-mode Power MOSFET Supports 2.
5V Gate Drive Lower On-resistance Surface-Mount Device RoHS-compliant, Halogen-free D BV DSS RDS(ON) G S 30V 35mΩ 5A ID Description Advanced Power MOSFETs from APEC provide the designer with the best combination of fast switching, low on-resistance and cost-effectiveness.
The AP2306AGN-HF-3 is in the popular SOT-23 small surface-mount package which is widely used in commercial and industrial applications where a small board footprint is required.
This device is well suited for use in medium current applications such as load switches.
D S SOT-23 G Absolute Maximum Ratings Symbol VDS VGS ID at T A =25°C ID at TA= 70°C IDM PD at TA=25°C TSTG TJ Parameter Drain-Source Voltage Gate-Source Voltage Continuous Drain Current Continuous Drain Current Pulsed Drain Current 1 3 3 Rating 30 ±8 5 4 20 1.
38 -55 to 150 -55 to 150 Units V V A A A W °C °C Total Power Dissipation Storage Temperature Range Operating Junction Temperature Range Thermal Data Symbol Rthj-a Parameter Maximum Thermal Resistance, Junction-ambient Value 90 Unit °C/W Ordering Information AP2306AGN-HF-3TR : in RoHS-compliant halogen-free SOT-23, shipped on tape and reel, 3000pcs/ reel ©2009 Advanced Power Electronics Corp.
USA www.
a-powerusa.
com 200810141-3 1/5 Advanced Power Electronics Corp.
AP2306AGN-HF-3 Electrical Specifications at Tj=25°C (unless otherwise specified) Symbol BVDSS RDS(ON) Parameter Drain-Source Breakdown Voltage Static Drain-Source On-Resistance2 Test Conditions VGS=0V, ID=250uA VGS=4.
5V, ID=5A VGS=2.
5V, ID=2.
6A VGS=1.
8V, ID=1.
0A VGS( h) gfs IDSS IGSS Qg Qgs Qgd td(on) tr td(off) tf Ciss Coss Crss Gate Threshold Voltage Forward Transconductance Drain-Source Leakage Current Gate-Source Leakage Total Gate Charge 2 Min.
30 0.
3 - Typ.
9 8.
3 1 3 5 9 20 5 400 90 70 Max.
Units 35 50 80 1.
2 1 25 ±100 15 1050 V mΩ mΩ mΩ V S uA uA nA nC nC nC ns ns ns ns pF pF pF VDS=VGS, ID=250u...


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