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AP02N40J

Advanced Power Electronics
Part Number AP02N40J
Manufacturer Advanced Power Electronics
Description N-CHANNEL ENHANCEMENT MODE POWER MOSFET
Published Sep 25, 2014
Detailed Description AP02N40J RoHS-compliant Product Advanced Power Electronics Corp. ▼ 100% Avalanche Test ▼ Fast Switching Characteristic ...
Datasheet PDF File AP02N40J PDF File

AP02N40J
AP02N40J

Overview
AP02N40J RoHS-compliant Product Advanced Power Electronics Corp.
▼ 100% Avalanche Test ▼ Fast Switching Characteristic ▼ Simple Drive Requirement G N-CHANNEL ENHANCEMENT MODE POWER MOSFET D BVDSS RDS(ON) ID 400V 5Ω 1.
6A S Description AP02N40 uses rugged design with the best combination of fast switching and cost-effectiveness.
The TO-251 package is widely preferred for commercial-industrial through-hole applications.
G D S TO-251(J) Absolute Maximum Ratings Symbol VDS VGS ID@TC=25℃ ID@TC=100℃ IDM PD@TC=25℃ EAS IAR TSTG TJ Parameter Drain-Source Voltage Gate-Source Voltage Continuous Drain Current, V GS @ 10V Continuous Drain Current, V GS @ 10V Pulsed Drain Current 1 Rating 400 +30 1.
6 1 3 33 2 Units V V A A A W mJ A ℃ ℃ Total Power Dissipation Single Pulse Avalanche Energy Avalanche Current Storage Temperature Range Operating Junction Temperature Range 5 1 -55 to 150 -55 to 150 Thermal Data Symbol Rthj-c Rthj-a Parameter Maximum Thermal Resistance, Junction-case Maximum Thermal Resistance, Junction-ambient Value 3.
8 110 Unit ℃/W ℃/W Data & specifications subject to change without notice 1 200811191 Downloaded from Elcodis.
com electronic components distributor AP02N40J Electrical Characteristics@Tj=25oC(unless otherwise specified) Symbol BVDSS RDS(ON) VGS(th) gfs IDSS IGSS Qg Qgs Qgd td(on) tr td(off) tf Ciss Coss Crss Parameter Drain-Source Breakdown Voltage Static Drain-Source On-Resistance Gate Threshold Voltage Forward Transconductance Drain-Source Leakage Current Gate-Source Leakage Total Gate Charge 3 3 Test Conditions VGS=0V, ID=1mA VGS=10V, ID=1A VDS=VGS, ID=250uA VDS=10V, ID=1A VDS=400V, VGS=0V VGS=+30V ID=1A VDS=320V VGS=10V VDD=200V ID=1A RG=50Ω,VGS=10V RD=200Ω VGS=0V VDS=25V f=1.
0MHz Min.
400 2 - Typ.
1.
5 6.
4 1.
2 3.
2 8 9 21 12 180 22 5.
6 Max.
Units 5 4 25 250 +100 10 300 V Ω V S uA uA nA nC nC nC ns ns ns ns pF pF pF Drain-Source Leakage Current (T j=125oC) VDS=320V, VGS=0V Gate-Source Charge Gate-Drain ("Miller") Charge Turn-on D...


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