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HAF2011S

Hitachi Semiconductor
Part Number HAF2011S
Manufacturer Hitachi Semiconductor
Description Silicon N Channel MOS FET Series Power Switching
Published Mar 23, 2005
Detailed Description HAF2011(L),HAF2011(S) Silicon N Channel MOS FET Series Power Switching Target specification ADE-208-738 (Z) 1st. Editio...
Datasheet PDF File HAF2011S PDF File

HAF2011S
HAF2011S

Overview
HAF2011(L),HAF2011(S) Silicon N Channel MOS FET Series Power Switching Target specification ADE-208-738 (Z) 1st.
Edition Jan.
1999 Features This FET has the over temperature shut–down capability sensing to the junction temperature.
This FET has the built–in over temperature shut–down circuit in the gate area.
And this circuit operation to shut–down the gate voltage in case of high junction temperature like applying over power consumption, over current etc.
• • • • Logic level operation (4 to 6 V Gate drive) High endurance capability against to the short circuit Built–in the over temperature shut–down circuit Latch type shut–down operation (Need 0 voltage recovery) Outline LDPAK D 4 G 4 Gate resistor Tempe– rature Sencing Circuit Latch Circuit Gate Shut– down Circuit 1 1 2 3 2 3 S 1.
Gate 2.
Drain 3.
Source 4.
Drain HAF2011(L),HAF2011(S) Absolute Maximum Ratings (Ta = 25°C) Item Drain to source voltage Gate to source voltage Gate to source voltage Drain current Drain peak...


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