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AP20N15GH

Advanced Power Electronics
Part Number AP20N15GH
Manufacturer Advanced Power Electronics
Description N-CHANNEL ENHANCEMENT MODE POWER MOSFET
Published Oct 4, 2014
Detailed Description AP20N15GH/J Preliminary Advanced Power Electronics Corp. ▼ Lower On-resistance ▼ Simple Drive Requirement ▼ Fast Switch...
Datasheet PDF File AP20N15GH PDF File

AP20N15GH
AP20N15GH

Overview
AP20N15GH/J Preliminary Advanced Power Electronics Corp.
▼ Lower On-resistance ▼ Simple Drive Requirement ▼ Fast Switching Characteristic ▼ RoHS Compliant G S D N-CHANNEL ENHANCEMENT MODE POWER MOSFET BVDSS RDS(ON) ID 150V 105mΩ 22A Description The TO-252 package is universally preferred for all commercialindustrial surface mount applications and suited for low voltage applications such as DC/DC converters.
The through-hole version (AP20N15GJ) is available for low-profile applications.
G D S TO-252(H) G D S TO-251(J) Absolute Maximum Ratings Symbol VDS VGS ID@TC=25℃ ID@TC=100℃ IDM PD@TC=25℃ TSTG TJ Parameter Drain-Source Voltage Gate-Source Voltage Continuous Drain Current, VGS @ 10V Continuous Drain Current, VGS @ 10V Pulsed Drain Current 1 Rating 150 ±20 22 14 88 96 0.
77 -55 to 150 -55 to 150 Units V V A A A W W/℃ ℃ ℃ Total Power Dissipation Linear Derating Factor Storage Temperature Range Operating Junction Temperature Range Thermal Data Symbol Rthj-c Rthj-a Parameter Thermal Resistance Junction-case Thermal Resistance Junction-ambient Max.
Max.
Value 1.
3 110 Units ℃/W ℃/W Data and specifications subject to change without notice 200913051pre-1/2 AP20N15GH/J Electrical Characteristics@Tj=25oC(unless otherwise specified) Symbol BVDSS ΔBVDSS/ΔTj Parameter Drain-Source Breakdown Voltage Test Conditions VGS=0V, ID=1mA 2 Min.
150 2 - Typ.
0.
1 15 18 6 5.
7 12 30 17 2 240 8 1.
5 Max.
Units 105 4 25 100 ±100 28 2.
3 V V/℃ mΩ V S uA uA nA nC nC nC ns ns ns ns pF pF pF Ω Breakdown Voltage Temperature Coefficient Reference to 25℃, ID=1mA RDS(ON) VGS(th) gfs IDSS IGSS Qg Qgs Qgd td(on) tr td(off) tf Ciss Coss Crss Rg Static Drain-Source On-Resistance Gate Threshold Voltage Forward Transconductance Drain-Source Leakage Current (T j=25 C) Drain-Source Leakage Current (T j=150 C) o o VGS=10V, ID=14A VDS=VGS, ID=250uA VDS=10V, ID=14A VDS=150V, VGS=0V VDS=120V ,VGS=0V VGS= ±20V ID=14A VDS=120V VGS=10V VDS=75V ID=14A RG=10Ω,VGS=10V RD=5.
4Ω VGS=0V VDS=25V f=1...


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